JPS6325512B2 - - Google Patents

Info

Publication number
JPS6325512B2
JPS6325512B2 JP54172723A JP17272379A JPS6325512B2 JP S6325512 B2 JPS6325512 B2 JP S6325512B2 JP 54172723 A JP54172723 A JP 54172723A JP 17272379 A JP17272379 A JP 17272379A JP S6325512 B2 JPS6325512 B2 JP S6325512B2
Authority
JP
Japan
Prior art keywords
diaphragm
diffusion layer
metal electrode
impurity diffusion
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54172723A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5696875A (en
Inventor
Shoichi Kakimoto
Tooru Kameda
Toshio Sogo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP17272379A priority Critical patent/JPS5696875A/ja
Publication of JPS5696875A publication Critical patent/JPS5696875A/ja
Publication of JPS6325512B2 publication Critical patent/JPS6325512B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/50—Devices controlled by mechanical forces, e.g. pressure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H01L2924/10158—Shape being other than a cuboid at the passive surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15151—Shape the die mounting substrate comprising an aperture, e.g. for underfilling, outgassing, window type wire connections

Landscapes

  • Pressure Sensors (AREA)
JP17272379A 1979-12-29 1979-12-29 Semiconductor pressure sensing device and manufacture thereof Granted JPS5696875A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17272379A JPS5696875A (en) 1979-12-29 1979-12-29 Semiconductor pressure sensing device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17272379A JPS5696875A (en) 1979-12-29 1979-12-29 Semiconductor pressure sensing device and manufacture thereof

Publications (2)

Publication Number Publication Date
JPS5696875A JPS5696875A (en) 1981-08-05
JPS6325512B2 true JPS6325512B2 (en]) 1988-05-25

Family

ID=15947128

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17272379A Granted JPS5696875A (en) 1979-12-29 1979-12-29 Semiconductor pressure sensing device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS5696875A (en])

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5878470A (ja) * 1981-11-04 1983-05-12 Mitsubishi Electric Corp 半導体圧力検出装置
JP4506478B2 (ja) * 2005-01-18 2010-07-21 株式会社デンソー 圧力センサ
JP2013024824A (ja) * 2011-07-26 2013-02-04 Denso Corp センサ装置の製造方法
EP4178428A1 (en) * 2020-08-25 2023-05-17 Edwards Lifesciences Corporation Implantable pressure sensor packaging

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53103375A (en) * 1977-02-22 1978-09-08 Toshiba Corp Semiconductor device

Also Published As

Publication number Publication date
JPS5696875A (en) 1981-08-05

Similar Documents

Publication Publication Date Title
US4295115A (en) Semiconductor absolute pressure transducer assembly and method
US4291293A (en) Semiconductor absolute pressure transducer assembly and method
US6444487B1 (en) Flexible silicon strain gage
CN104296899B (zh) 高灵敏度硅压阻压力传感器及其制备方法
JPH06129933A (ja) 過圧保護ポリシリコン容量性差圧センサー及びその製造方法
JPS62213280A (ja) 半導体加速度センサ
CN105021328B (zh) Cmos工艺兼容的压阻式压力传感器及其制备方法
JP3873454B2 (ja) 半導体圧力センサ
US4459855A (en) Semiconductor pressure sensor
JPS6325512B2 (en])
JP3310216B2 (ja) 半導体圧力センサ
JP3328707B2 (ja) 静電容量型半導体加速度センサ及び半導体圧力センサ
JP3401992B2 (ja) 半導体感歪センサ
JP2748077B2 (ja) 圧力センサ
JP2519393B2 (ja) 半導体力学量センサの製造方法
JPH1022512A (ja) 静電容量型圧力センサ
JPS6097676A (ja) 半導体圧力センサ及びその製造方法
KR830000113B1 (ko) 반도체 압력 변환기
JPH07105504B2 (ja) 半導体歪検出器
JPS6175535A (ja) 半導体装置
JPS5919439Y2 (ja) 半導体感圧装置
JPH06347354A (ja) 半導体圧力センサの製造方法
KR0174124B1 (ko) 반도체 압력센서의 제조방법
JPS581551B2 (ja) 半導体圧力変換器
JPS6222539B2 (en])